Dopant Ion
| Ho3+ concentration range |
0.005 - 100 atomic % |
| Dopant Ion Density @ 1 atomic % |
|
| Y3+ Site |
1.38 x 1022 cm-3 |
| Al3+Site (IV) |
1.38 x 1022 cm-3 |
| Al3+Site (VI) |
0.92 x 1022 cm-3 |
Common Operating Specs
| Emission Wavelength |
2.01 μm |
| Laser Transition |
5I7 → 5I8 |
| Flouresence Lifetime |
8.5 ms |
| Pump Wavelength |
1.9 μm |
Physical Properties
| Coefficient of Thermal Expansion |
6.14 x 10-6 K-1 |
| Thermal Diffusivity |
0.041 cm2 s-2 |
| Thermal Conductivity |
11.2 W m-1 K-1 |
| Specific Heat (Cp) |
0.59 J g-1 K-1 |
| Thermal Shock Resistant |
800 W m-1 |
| Refractive Index @ 632.8 nm |
1.83 |
| dn/dT (Thermal Coefficient of Refractive Index) @ 1064nm |
7.8 10-6 K-1 |
| Molecular Weight |
593.7 g mol-1 |
| Melting Point |
1965°C |
| Density |
4.56 g cm-3 |
| MOHS Hardness |
8.25 |
| Young’s Modulus |
335 Gpa |
| Tensile Strength |
2 Gpa |
| Crystal Structure |
Cubic |
| Standard Orientation |
<111> |
| Y3+ Site Symmetry |
D2 |
| Lattice Constant |
a=12.013 Å |
References
1)A. A. Kaminskii, "Crystaline Lasers: Physical Processes and Operating Schemes", CRC Press, (1996), Section 1.4.5, ISBN:0-8493-3720-8
2)Early work on diode pumping of Ho:YAG can be found in: T.Y. Fan, et al., Opt. Lett., 12, 678 (1987) along with R. Allen et al., Electron. Lett., 22, 947 (1986).
3) 3 S. Lamrini, et al., "High-Power Ho:YAG Laser in-Band Pumped by Laser Diodes at 1.9 ?m and avelength-Stabilized by a Volume Bragg Grating" ASSP 2010 Technical Digest, ISBN 978-1-55752-883-4.
4) Xiaodong Mu, et al., "High Efficiency, High Power 2.097-μm Ho:YAG Laser", ASSP 2010 Technical Digest, ISBN 978-1-55752-883-4
Laser Materials
